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. 2019 Jul 12;12(14):2242. doi: 10.3390/ma12142242

Figure 10.

Figure 10

(a) SEI, (b) HSI, and (c) DRCL spectra obtained at EB = 5 keV of a 700 nm diameter ZnO nanowire on SiO2 with a wire section milled down to 400 nm to remove segregated defects (lower left) versus a section e-beam annealed to promote additional defects (upper right). With permission from [18]. Copyright 2018 American Chemical Society.