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. 2019 Aug 7;10:3547. doi: 10.1038/s41467-019-11578-y

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© The Author(s) 2019

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

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Fig. 1 — The design principle of low loss on-chip HCTAs. a A schematic view of 1D HCTA with a lattice constant a = 500 nm, defined on SOI substrate. It can impose localized phase shift on the electromagnetic wave traveling in plane. b Typical top (x–y plane) and c side (x–z plane) view of the intensity profile |E_y|² near the air slot. The dotted lines show the outline of the slot and the solid lines show the outline of silicon slab. d Simulated amplitude and e phase retardation of the transmission as a function of the slot width and length. The wavelength of the input light is 1550 nm. f The simulated amplitude and phase of the transmission versus slot length, fixing the slot width to be 140 μm