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. 2019 Aug 16;5(8):eaav3489. doi: 10.1126/sciadv.aav3489

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Copyright © 2019 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works. Distributed under a Creative Commons Attribution NonCommercial License 4.0 (CC BY-NC).

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Fig. 5 — (A) ±P_r (normalized to their initial value) as a function of the cumulative number of cycles. Nylon-11 ferroelectric capacitors outperform P(VDF-TrFE). (B) Data retention as a function of time measured for a period longer than a week. The inset shows the histogram of the P_r values obtained for thin film (240 nm) capacitors from different fabrication batches. The SQ thin films show a narrow distribution in P_r. (C) D-E hysteresis loops for various film thicknesses as a function of applied bias and electric field (inset). (D) The evolution of E_c and the yield of functional ferroelectric capacitors with film thickness. The dashed lines are a guide to eye.