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. 2019 Aug 23;5(8):eaaw8904. doi: 10.1126/sciadv.aaw8904

Fig. 2. Magnetic properties of FGT/Pt bilayer.

Fig. 2

(A) Hall resistance as a function of magnetic field at different temperatures. (B) Arrott plots of the Hall resistance of the FGT/Pt device. The determined Tc is 158 K. (C) RAHE as a function of in-plane (IP) and out-of-plane (OOP) magnetic field at 90 K.