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. 2019 Aug 28;9:12482. doi: 10.1038/s41598-019-48981-w

Table 2.

Parameters used in emitter and base doping optimization of IBC cell as described in Fig. 6.

Parameters Description
H 10 μm
τ SRH 10 ms
Contact SRV 10 cm/s
Bulk acceptor doping 5 × 1015cm−3
w pcon 140 μm
w ncon 10 μm
w pn 1 μm
w pdop 1.1wpcon
w ndop 1.1wncon

The Auger recombination of the carriers are described by improved Auger model of11. The BGN of Si and surface recombination at Si − SiO2 interface are modeled according to the details illustrated in the “Methods” section.