Table 4.
Parameters used in thickness optimization of inverted pyramid photonic crystal IBC cell as described in Fig. 9.
| Parameters | Description |
|---|---|
| τ SRH | 0.1, 0.5, 1 and 10 ms |
| contact srv | 10 cm/s |
| w pcon | 140 μm |
| w ncon | 10 μm |
| w pn | 1 μm |
| w pdop | 1.1wpcon |
| w ndop | 1.1wncon |
| bulk acceptor doping | 5 × 1015 cm−3 |
| N p0 | 4 × 1018 cm−3 |
| σ p | 100 nm |
| N n0 | 2 × 1018 cm−3 |
| σ n | 220 nm |
The Auger recombination of the carriers are described by improved Auger model of11. The BGN of Si and surface recombination at Si − SiO2 interface are modeled according to the details illustrated in the “Methods” section.