Table 2 |.
Dry-etching recipe for quartz substrate
| Parameter (unit) | Value |
|---|---|
| C4F8 (sccm) | 80 |
| Pressure (mT) | 7 |
| RF1 Bias(W) | 80 |
| RF2 ICP (W) | 1500 |
| Electrode temperature (°C) | 30 |
| Etching rate (nm s−1) | 6.25 |
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