Table 3 |.
Dry-etching recipe for Si substrate
| Parameter (unit) | Value |
|---|---|
| CF4 (sccm) | 40 |
| o2 (sccm) | 2 |
| Pressure (mT) | 15 |
| RF1 Bias (W) | 50 |
| RF2 ICP (W) | 600 |
| Electrode temperature (Celsius) | 30 |
| Etching rate (nm s−1) | 7 |
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