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. 2019 Aug 1;9(8):1101. doi: 10.3390/nano9081101

Figure 5.

Figure 5

(a) |E| of the absorber at the interface between air and VO2 film (b) |E| of the absorber at the interface between VO2 and dielectric layer (c) |E| in the center of the xz plane of the absorber of the cell (d) |H| at the xz plane of the absorber. All frequencies are set at 48.0781 THz.