Fig. 3.

Scaled Gaussian Synapses. Simulated back-gated transfer characteristics of (a) n-type and (b) p-type 2D FET for corresponding different top-gate voltages V_N and V_P, respectively, using the Virtual Source (VS) model. In the VS model, both the subthreshold and the above threshold behavior are captured through a single semi-empirical and phenomenological relationship that describes the transition in channel charge density from weak to strong inversion. c Transfer characteristics, (d) amplitude, (e) mean, and (f) standard deviation of the Gaussian synapse obtained via heterogeneous integration of the n-type and the p-type 2D FETs for different combinations of V_N and V_P. The following parameters were used for the simulation. $L_{\mathrm{N}}=L_{\mathrm{P}}=1\mathrm{\mu }\mathrm{m}$; $W_{\mathrm{N}}=W_{\mathrm{P}}=2\mathrm{\mu }\mathrm{m}$;${\mathrm{\mu }}_{\mathrm{N}}={\mathrm{\mu }}_{\mathrm{P}}=20{\mathrm{cm}}^2{\left(\mathrm{Vs}\right)}^{-1}$;$C_{\mathrm{BG}}=7\times 10^{-3}\mathrm{F}{\mathrm{m}}^{-2}$; M = 1; α = 1; V_D = 1 V