Table 3.

Experimental conditions for the preparation of LCO thin films deposited by the rf-sputtering technique.

Atmosphere a)	Power (W)	Deposition Rate (nm s−1)	Substrate	Substrate Temperature (°C)	Structural/Electrochemical Properties c)	Ref.
3:1/55/1.0	100	3.2	Si (100) wafer	25	Influence of the target history and deposition geometry	[51]
9:3/12/5	100		Si/SiO2/Ti/Pt	250	Ta = 700 °C, Qd = 61 µAh cm−2 µm−1; Rc = 74% after 50 cycles	[63]
3:1/40/0.5	80	1.6	Si/Ti/MgO/Pt	10	Ta = 800 °C, Qd = 70 µAh cm−2 µm−1 @ 5 µA cm−2; Rc = 30% over 40 cycles	[64]
96:4/50/0.5	2.75 b)	~0.3	Al2O3/Ti/Au	~110	Ta = 800 °C, Qd = 60 µAh cm−2 µm−1 @ C/10; Rc = 95% over 100 cycles	[47]
9:1/-/0.5	4.4 b)		Si/Pt and Cu foil	200	Ta = 700 °C, Qd = 52 µAh cm−2 µm−1 @ 50 µA	[61]
5:1/150/0.2	130	0.03	Al foil	65	c, Qd = 46 µAh cm−2 µm−1 @ 5 µA cm−2; Rc = 78% over 100 cycles	[65]
9:1/-/0.5	150	0.1	Si/Al/Li2O	25	(101)-oriented; Qd = 40 µAh cm−2 µm−1@20 µA cm−2; Rc = 78%@640 µA cm−2	[48]
4:1/150/0.27	130	0.05	Stainless steel	25	Qd = 44 µAh cm−2 µm−1@10 µA cm−2; Rc = 66% after 30 cycles	[66]
3:1/53/2.2	500		Al foil	25	Ta = 500 °C, Qd = 50 µAh cm−2 µm−1@10 µA cm−2; Rc = 80% after 800 cycles	[25]
1:0/-/2.0	100	8.3	Au	25	Kinetics of (104)-plane. DLi ≈ 10−10–10−12 cm2 s−1	[67]
2:1/-/0.5	200		Pt wafer	55	Power of 200 W, Qd = 61 µAh cm−2 µm−1@20 µA cm−2	[68]
40:1/20/0.14	500	1	Quartz/Pt	300	Thickness dependence; Qd = 72 µAh cm−2 µm−1@0.1 mA cm−2	[23]
3:1/12/2	100		Si/Pt	25–600	Ts = 250 °C, Ta = 600 °C, Qd = 50 µAh cm−2 µm−1@10 µA cm−2	[70]
9:1/-/0.5	50	0.8	Sapphire/SiO2/Al	25	Ta = 500 °C, thermal conductivity 3.7 W m−1 K−1 for Li0.6CoO2	[71]
9:3/12/0.5	50	0.02	Si/SiO2/Pt	25	Ta = 800 °C, Qd = 27 µAh cm−2 µm−1@50 µA cm−2 after 150 cycles	[72]

a) Composition of the Ar:O₂ gas mixture/flow rate in standard cubic centimeter per minute (sccm)/chamber pressure in Pa; b) Specific sputtering power in W cm⁻²; c) T_a = optimum annealing temperature; Q_d = specific discharge capacity; R_c capacity retention.