. 2019 Jun 4;13(6):6730–6741. doi: 10.1021/acsnano.9b01275

Table 1. Calculation of Biaxial Strain in GaN and AlN Layers at Sample Locations Corresponding to Red, Orange, and Blue Curves in Figure 2 ^a.

	GaN				AlN
curve	ε_xx^RSM (%)	E₁(TO) (cm^–1)	σ_xx (GPa)	ε_xx^SHG (%)	ε_xx^RSM (%)	E₁(TO) (cm^–1)	σ_xx (GPa)	ε_xx^SHG (%)
red	–1.2 (1)	585.9 (1)	–6.9 (6)	–1.4 (1)	1.3 (1)	637.6 (1)	7.8 (4)	1.5 (1)
orange	–1.0 (1)	580.2 (1)	–5.3 (6)	–1.1 (1)	1.4 (1)	631.5 (1)	9.1 (4)	1.8 (1)
blue	–0.7 (1)	574.7 (1)	–3.8 (6)	–0.8 (1)	1.8 (1)	625.6 (1)	10.4 (4)	2.0 (1)

ε_xx^RSM is the in-plane strain determined by X-ray diffraction reciprocal space mapping. σ_xx and ε_xx are the biaxial stress and in-plane strain estimated from the frequency shift of the E₁(TO) phonon modes in Figure 2. Error of the last digit is denoted in the parentheses.

Table 1. Calculation of Biaxial Strain in GaN and AlN Layers at Sample Locations Corresponding to Red, Orange, and Blue Curves in Figure 2a.

Table 1. Calculation of Biaxial Strain in GaN and AlN Layers at Sample Locations Corresponding to Red, Orange, and Blue Curves in Figure 2 ^a.