Table 2. Fitting Parameters for DHFRNtagO2.
| parameter | description | type | valuea |
|---|---|---|---|
| Vbias | applied bias voltage | independent | 40 to 120 mV |
| Ntag | tag charge number | independent | 4 to 9 |
| Nbody | body charge number | fixed | –13 |
| Neo | equivalent osmotic charge number | dependent | 15.5 ± 0.9 |
| L | nanopore length | fixed | 14 nm |
| Δxtrans | distance to trans barrierb | fixed | 3.5 nm |
| Δxcis | distance to cis barrierb | dependent | 5.21 ± 1.32 nm |
| ΔVtagtrans | change of ΔEestrans with tag charge | dependent | 0.860 ± 0.078 kBT/e |
| ΔVtagcis | change of ΔEescis with tag charge | dependent | 0.218 ± 0.167 kBT/e |
| ln(kefftrans/Hz) | effective attempt rate for the trans barrier | dependent | –3.44 ± 1.24 (3.21 × 10–2 Hz) |
| ln(keffcis/Hz) | effective attempt rate for the cis barrier | dependent | 7.39 ± 1.02 (1.62 × 103 Hz) |
a
Errors are confidence intervals for one standard deviation.
b
Relative to the energetic minimum inside the pore.