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. Author manuscript; available in PMC: 2019 Dec 17.
Published in final edited form as: Nat Nanotechnol. 2019 Jun 17;14(7):674–678. doi: 10.1038/s41565-019-0467-1

Figure 3. Bias and temperature dependent magnetoresistance measurements in device B (~ 9 nm thick).

Figure 3

a, Magnetic field dependence of the device resistance. The red (black) arrow represents the sweep direction from positive (negative) to negative (positive) values. b, VSD dependence of the magneto-resistance change measured at T = 1.5 K. Scale bar is 5 Ω. Curves shown for sweeps at 0.1 V ≤ VSD ≤ 0.45 V are offset for clarity. c, Temperature dependence of ΔR measured at fixed bias of VSD = 0.1 V. Scale bar is 2 Ω. Curves shown for sweeps at 2.75 K ≤ T ≤ 7.8 K are offset for clarity.