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. 2019 Oct 4;10:4510. doi: 10.1038/s41467-019-12466-1

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© The Author(s) 2019

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

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Fig. 4 — Nonreciprocal response R^2ω depending on the applied gate voltage, current, and magnetic field. a R^2ω as a function of the xy angle of the applied magnetic field 8 T measured with various gate voltages. Measurements were done with I_ac = 200 μA at 8 K. b Maximum R^2ω as a function of the applied V_g. Results are consistent with DC measurements displaying asymmetric V_g dependence. c R^2ω as a function of the xy angle of the applied magnetic field 8 T measured at 8 K with increasing I_ac. d Plot of maximum R^2ω vs. I_ac exhibiting linear behavior. e R^2ω as a function of the xy angle of the applied magnetic field. Measurements were done at 8 K with I_ac = 200 μA for various applied magnetic fields. f Maximum R^2ω as a function of the applied magnetic field. R^2ω shows initially a linear dependence on the applied magnetic field and a higher-order dependence at high magnetic field