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. 2019 Sep 2;9(9):1245. doi: 10.3390/nano9091245

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© 2019 by the authors.

Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).

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(a)The relationship curve between the mobility degradation coefficient $θ$ and V_gs (green) and Y-function as function of V_gs (black). (b) The contact resistance extracted from the mobility degradation curve. (c) The equivalent diode model of current flowing. (d) I–V characteristics at V_gs = 0 V and the energy band diagram(inset). (e) I–V characteristics at different gate voltage.