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. 2019 Sep 6;9(9):1273. doi: 10.3390/nano9091273

Figure 2.

Figure 2

(a) X-Ray diffraction (XRD) of combustion IGZO films with different In:Ga:Zn ratio; inset shows the scanning electron microscopy (SEM) surface image and atomic force microscopy (AFM) topography of 3-layer IGZO 3:1:1; (b) atomic concentration (%) of each metallic cation in 3-layer combustion IGZO films with different In:Ga:Zn ratio determined by electron dispersive X-ray spectroscopy (EDS) analysis; (c) X-ray photoelectron spectroscopy (XPS) surface spectra of IGZO 3:1:1 thin films produced with and without urea (d) and In:Ga:Zn atomic percentage after argon cluster etching (0–300 s).