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. 2019 Sep 6;9(9):1273. doi: 10.3390/nano9091273

Figure 5.

Figure 5

(a) Transfer characteristics of a fully solution-based passivated 3-layer IGZO 3:1:1/AlOx TFT; (b) threshold voltage variation (ΔVT) under positive gate bias stress (PBS) (0.5 MV·cm−1) for 1 h in air environment.