Table 1.
Solution-based indium gallium zinc oxide (IGZO) thin film transistors produced at T ≥ 300 °C by spin-coating deposition of 2-methoxyethanol (2-ME) based precursors.
| Year | Fuel | Tmax (°C) | W/L | Dielectric (Technique) | In:Ga:Zn Ratio | µSAT (cm2/Vs) | SS (V/dec) | IOn/IOff | Von (V) | VGS (V) |
|---|---|---|---|---|---|---|---|---|---|---|
| 2008 [11] | No | 450 | 1000/150 | SiNx (PECVD) | 1:1:2 | 0.96 | 1.39 | 106 | ~5 | −15 to 55 |
| 2009 [12] | 400 | 1000/150 | SiNx (PVD) | 1:1:2 | 0.56 (μef) | 2.81 | 4.6 × 106 | 5 | −30 to 30 | |
| 3:1:2 | 0.90 (μef) | 1.16 | 3.8 × 106 | ~0 | ||||||
| 5:1:2 | 1.25 (μef) | 1.05 | 4.1 × 106 | −10 | ||||||
| 2009 [13] | 400 | 100/50 | SiO2 | 2:1:2 | 2 (μef) | - | 105 | - | −40 to 40 | |
| 2010 [14] | 400 | 1000/90 | ATO (ALD) | 3:1:1 | 5.8 (μlin) | 0.28 | 6 × 107 | ~0 | −10 to 30 | |
| 2010 [15] | 500 | 200/20 | SiO2 (Thermal oxidation) | 4:1:5 | 1.13 | 2.5 | - | - | −30 to 40 | |
| 2010 [7] | 450 | 1000/150 | SiNx | 3:1:2 | 0.86 (μlin) | 0.63 | 106 | ~0 | −30 to 30 | |
| 2010 [16] | 300 | 1000/100 | SiO2 | 63:10:27 | 0.2 | - | 105 | ~−15 | −40 to 40 | |
| 2011 [17] | 300 | 500/100 | SiO2 | 5:1:2 | 0.003 | 2.39 | 4.5 × 104 | - | −20 to 30 | |
| 2013 [18] | 300 | 1000/100 | SiO2 (Thermal oxidation) | 62:5:23 | 1.73 (μef) | 0.32 | 107 | 11 | −10 to 40 | |
| 2013 [19] | Yes (acac) | 300 | 5000/100 | SiO2 (Thermal Oxidation) | 80:10:10 | 5.43 | - | 108 | - | 0 to 100 |
| 2019 [20] | 300 | 1000/100 | SiO2 | 10:1:3 | 1.62 | 0.03 | 106 | ~0 | −40 to 80 | |
| 2019 [3] | No | 350 | n.d./100 | SiO2 | 68:10:22 | 0.72 | 0.68 | 106 | ~0 | −30 to 30 |
| This work | Yes (urea) | 300 | 160/20 | AlOx | 3:1:1 | 3.2 | 0.073 | 106 | 0.18 | −1 to 2 |
W/L: Width/Length; PECVD: plasma enhanced vapor deposition PVD: physical vapor deposition; ATO: aluminum-doped tin oxide; ALD: atomic layer deposition; acac: acetylacetone; n.d.: not defined.