Fig. 9.

Reduction of whole-cell conductance near the resting potential by 1S,3R-ACPD, and occlusion by 4-AP. A, Slope conductance, measured between −60 and −40 mV, before, during, and (3 min) after exposure to 1S,3R-ACPD. B, Occlusion of 1S,3R-ACPD-induced suppression of resting conductance by addition of 4-AP to the external solution. 4-AP reduced whole-cell conductance at voltages positive to approximately −60 mV, and no further change was seen on application of 1S,3R-ACPD. Note that neither 4-AP nor 1S,3R-ACPD induced changes in conductance at voltages negative to −60 mV. Data are mean ± SD;n = 8 for 1S,3R-ACPD,n = 3 for 1S,3R-ACPD in 4-AP.