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. 2019 Oct 10;9:14489. doi: 10.1038/s41598-019-51048-5

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© The Author(s) 2019

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

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Open circuit potential as function of InGaN layer thickness. OCP as a function of time for the InN/InGaN electrode and Ag/AgCl reference electrode immersed alternately for 150 seconds in 0.1 and 1 M KCl aqueous solutions. The insets show the top-view- (left-hand side) and cross-sectional (right-hand side) SEM images. The In_0.45Ga_0.55N layer thicknesses are (A) 35, (B) 95, (C) 130 and (D) 190 nm. The InN deposition amount is 0.8 ML for all samples.