Fig. 3.

Temperature-dependent charge-transport in device A. a IV traces of device A at various temperatures (circles) and the global fit (solid lines) where all parameters except the molecule-electrode couplings are shared. b Zero-bias conductance normalised by ($\overline{\mathrm{\Gamma }}={\mathrm{\Gamma }}_{\mathrm{S}}{\mathrm{\Gamma }}_{\mathrm{D}}∕\left({\mathrm{\Gamma }}_{\mathrm{S}}+{\mathrm{\Gamma }}_{\mathrm{D}}\right)$) as a function of temperature. Black circles: experimental values with error bars (95% confidence interval) obtained by propagating a random 0.2 pA error on current measurements with the uncertainty on Γ_S and Γ_D obtained from the fits to the quantum model shown in a. Orange line: Marcus model using λ = 27.6 meV. Green line: Quantum model using one mode and a broad background (ћω = 4.1 meV, S = 0.4, λ_o = 26 meV, ω_c = 8.3 meV)