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. 2019 Oct 10;7:667. doi: 10.3389/fchem.2019.00667

Table 2.

Device figures of merit estimated on fresh and aged samples (used for 2 weeks).

Sample ID μFET (cm2V−1s−1) VT (V) |ID(max)| (μA)
P3HT (t = 0 day) (5 ± 2)*10−2 −0.03 ± 0.05 2.8 ± 1.2
P3HT (t = 15 days) (4 ± 2)*10−2 −0.16 ± 0.05 1.1 ± 0.8
P3HT/ZnO (t = 0 day) (7 ± 3)*10−2 −0.04 ± 0.03 5 ± 2
P3HT/ZnO (t = 15 days) (7 ± 3)*10−2 −0.13 ± 0.03 3 ± 2

A comparison with P3HT devices bearing ZnO nanoparticles (P3HT/ZnO) is shown. Errors refer to one standard deviation for n = 10.