Table 2.
Sample ID | μFET (cm2V−1s−1) | VT (V) | |ID(max)| (μA) |
---|---|---|---|
P3HT (t = 0 day) | (5 ± 2)*10−2 | −0.03 ± 0.05 | 2.8 ± 1.2 |
P3HT (t = 15 days) | (4 ± 2)*10−2 | −0.16 ± 0.05 | 1.1 ± 0.8 |
P3HT/ZnO (t = 0 day) | (7 ± 3)*10−2 | −0.04 ± 0.03 | 5 ± 2 |
P3HT/ZnO (t = 15 days) | (7 ± 3)*10−2 | −0.13 ± 0.03 | 3 ± 2 |
A comparison with P3HT devices bearing ZnO nanoparticles (P3HT/ZnO) is shown. Errors refer to one standard deviation for n = 10.