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. Author manuscript; available in PMC: 2019 Oct 18.
Published in final edited form as: ACS Appl Mater Interfaces. 2017 Dec 5;9(49):42633–42638. doi: 10.1021/acsami.7b15302

Figure 1.

Figure 1.

Flexible electronics encapsulated with thermally grown silicon dioxide (TG-SiO2) and dissolution of TG-SiO2 due to immersion in simulated biofluids at 37 °C. (a, b) Demonstration of electronic devices and flexible electronic systems encapsulated with TG-SiO2. (a) Optical images of flexible n-type metal-oxide-semiconductor (NMOS) transistors (scale bar: 1 cm (black), 200 μm (white, inset)). (b) Results of soak tests of NMOS in PBS solutions at 100 °C. (c) Change in thickness of TG-SiO2 as a function of time of immersion in simulated biofluids. (d) Measured dissolution rates (nm/day) for these fluids.