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. 2019 Sep 26;12(19):3149. doi: 10.3390/ma12193149

Figure 2.

Figure 2

(a) IDVGS transfer curve characteristic at VDS = 0.1 V for various O-contents. The inset is the fabricated a-IGZO thin-film transistor (TFT) with an inverted staggered bottom-gate structure. The statistical data of (b) subthreshold swing (SS)-VT, and (c) μFE-VT were extracted from 10 devices for each O-content.