Figure 3.

(a) Superposition of SEM cross-sections along the [$11\overline{2}$] showing the upper part of the hexagonal, 2-$\mathsf{\mu }$m-wide and 8-$\mathsf{\mu }$m-tall, initial Si pillar (gray) and the 3C-SiC crystal grown on top after 3 $\mathsf{\mu }$m (red) and 6 $\mathsf{\mu }$m (blue) of deposition. (b) Cross-section along the same direction for the simulated crystal: the black dashed lines are taken for each $\mathsf{\mu }$m of deposition, the red (blue) profile corresponds to 3$\mathsf{\mu }$m (6 $\mathsf{\mu }$m) of deposition. (c) Simulated growth sequence in perspective view.