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. 2019 Sep 28;19(19):4214. doi: 10.3390/s19194214

Figure 2.

Figure 2

Indium-tin oxide nanowires (ITO-NW) FETs were fabricated by (A) coating indium and tin film onto gold film and (B) defining pattern of the devices by E-beam lithography before (C) treating them with controlled parameters in tubular furnace to (D) form ITO nanowires [66]. Reprinted from Biosensors and Bioelectronics, 105, Shariati, The Field Effect Transistor DNA Biosensor Based on ITO Nanowires in Label-Free Hepatitis B Virus Detecting Compatible with CMOS Technology, 58–64, Copyright 2018, with permission from Elsevier.