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. 2019 Sep 28;19(19):4214. doi: 10.3390/s19194214

Figure 5.

Figure 5

Schematic model of the AlGaN/GaN high electron mobility transistor (HEMT) with the active channel and gate electrode, which is functionalized with receptors, are passivated separately. Only these two components of this FET biosensor are exposed to the analytes [74].