Table 2.
Summary of the device characteristics.
| Device | Device structurea (EBL/EML/HBL/ETL/EIL) | EQEmax (%) | CEmax (cd/A) | LEmax (lm/W) | CIE (x, y)b |
|---|---|---|---|---|---|
| D1 | PVK (15 nm)/PO-T2T:P1 20 wt% (50 nm)/DPEPO (10 nm)/TPBi (50 nm)/LiF (1 nm) | 1.1 | 0.9 | 0.9 | (0.42, 0.52) |
| D2 | PVK (15 nm)/mCP:P1 20 wt% (50 nm)/DPEPO (10 nm)/TPBi (50 nm)/LiF (1 nm) | 4.3 | 3.0 | 2.5 | (0.24, 0.37) |
| D3 | P1 (30 nm)/PO-T2T (10 nm)/Bphen:Cs (50 nm) | 2.2 | 1.9 | 1.9 | (0.39, 0.54) |
| D4 | P1 (30 nm)/TmPyPB (10 nm)/Bphen:Cs (50 nm) | 0.9 | 0.7 | 0.4 | (0.20, 0.35) |
| D5 | PVK (15 nm)/PO-T2T:P1 99 wt% (50 nm)/DPEPO (10 nm)/TPBi (50 nm)/LiF (1 nm) | 1.7 | 1.8 | 1.8 | (0.28, 0.40) |
| D6 | PVK (15 nm)/PO-T2T:P1 99.5 wt% (50 nm)/DPEPO (10 nm)/TPBi (50 nm)/LiF (1 nm) | 1.2 | 1.3 | 1.6 | (0.31, 0.44) |
a
The complete device is composed of ITO/PEDOT:PSS (70 nm)/EBL/EML/HBL/EIL/Al (100 nm). For D3 and D4, no EBL, and EIL are used.
b
D1–D4 are obtained at a driving current of 0.5 mA, while D5-D6 are obtained at 100 cd/m2.