Table 3.
Device | EML structure | ηint | ηint_DF | ηint_DF/ηint | ηout | γd |
---|---|---|---|---|---|---|
(%)a | (%)b | (%)c | ||||
D1 | PO-T2T:P1 20 wt% | 8.1 | 7.4 | 0.92 | 15.3 | 0.88 |
D2 | mCP:P1 20 wt% | 49.8 | 41.6 | 0.83 | 12.3 | 0.69 |
D3 | PO-T2T/P1 | 8.1 | 7.4 | 0.92 | 22.2 | 1.22 |
D4 | P1 neat film | 30.7 | 23.2 | 0.76 | 21.1 | 0.13 |
Calculated from Equation (6).
Calculated from Equation (7).
Simulation results. Details in experimental sections.
Electrical efficiency, calculated from Equation (1).