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. 2019 Nov 4;9:15897. doi: 10.1038/s41598-019-50294-x

Figure 4.

Figure 4

(a) Schematic illustration of device configuration. (b), Cross-polarized optical microscopy images of device. (c) Transfer characteristics of the device (VD = −20 V). Black broken and magenta dot-dashed lines represent the fit and the slope for an ideal transistor, respectively. Channel length (L) and channel width (W) are 200 μm and 500 μm.