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. 2019 Oct 10;12(20):3293. doi: 10.3390/ma12203293

Figure 5.

Figure 5

(a) Stacking Faults density as a function of the growth temperature obtained by optical observation of the 3C-SiC layer; (b) Stacking Faults length as a function of growth temperature. The data were obtained after the molten KOH etching of the 3C-SiC wafer at 500 °C.