Table 7.

Effect of nitrogen-doping temperature on electrical band-gap of N-rGO.

Sample	Resistivity/Ω mm−1	Conductivity/mmS m−1	Band-Gap/eV
GO	7.89	0.127	3.240
N-rGO-1N-600 °C	4.92	0.203	2.500
N-rGO-2N-600 °C	4.63	0.216	2.403
N-rGO-3N-600 °C	5.00	0.200	2.526
N-rGO-1N-700 °C	3.29	0.304	1.866
N-rGO-2N-700 °C	5.04	0.198	2.538
N-rGO-3N-700 °C	4.93	0.203	2.502
N-rGO-1N-800 °C	4.59	0.218	2.392
N-rGO-2N-800 °C	8.03	0.125	3.269
N-rGO-3N-800 °C	4.63	0.216	2.405