Table 5.
Sensing Material | Limit of Detection | Response Time | Recovery Time | T° | Sensor Type | Ref. |
---|---|---|---|---|---|---|
Pd nanowire | 0.50% | <0.08 s/~4% | nr | RT | electrical | [114] |
Pd nanowire | 27 ppm | 4 s/~2.4% | nr | RT | electrical | [126] |
Pd nanowire | <10 ppm | ~ 30 s/~4% | 100 s | RT | electrical | [115] |
Pd nanowire | 200 ppm | 2 s/~5% | 6 s | RT | electrical | [127] |
Pd nanowire | 100 ppm | <1 s/~1% | nr | RT | electrical | [116] |
PdAu nanowire | 0.20% | 0.5 s/0–6.5% | 2 s | RT | optical | [117] |
Pd@Pt nanowire | 500 ppm | 2 s/~0.4% | 2.5 s | 294–376 K | electrical | [118] |
Pd nanostrip | <10 ppm | 12 s/~1% | nr | RT | optical | [119] |
Au/SiO2/Pd MIM | 0.50% | 3 s/~4% | 10 s | RT | optical | [105] |
Pd/Au films | nr | 5 s/4% | 13 s | nr | optical | [121] |
Pd/Mg film | <10 ppm | 6 s/1% | 33 s | RT | electrical | [124] |
Pd/Mg-Pd film | nr | 3 s/2 bar | ~3 s | RT | electrical | [122] |
Pd/Mg-Ni film | 10 ppm | 5 s/0.1% | nr | RT | electrical | [128] |
Pd-V2O5 film | 2 ppm | 6 s/~100 ppm | 21 s | 373 K | electrical | [123] |
Pd/ZnO film | 0.10% | 0.3 s/2% | 18 s | 353 K | nr | [51] |
Pd nanotube | 500 ppm | few s/1% | nr | RT | electrical | [125] |
PdY film | 500 ppm | 4 s/~4% | nr | RT | optical | [129] |
Pd gratings | 50 ppm | 18 s/~0.35% | nr | RT | electrical | [130] |
Pd gratings | nr | 4 s/~1% | nr | 293–323 K | optical | [131] |
Pd NWs@ZIF | 600 ppm | 7 s/~1% | 10 s | RT | electrical | [132] |
Pd film/SiC nanocauliflowers | 2 ppm | 7 s/~100 ppm | 13 s | 573 K | electrical | [133] |
Pd film | 48 ppm | 15 s/~0.2% | nr | RT | SAW | [134] |
Pd/ZnO film | 59 ppm | 12 s/2% | nr | RT | SAW | [112] |
PdAu film | 100–300 ppm | 8 s/1% | 2 min | RT | optical | [135] |
Pd film (Pd-gate MOS transistor) | 10 ppm | nr | nr | 423 K | electrical | [127] |
Pd film (Pd-gate MOS transistor) | 1 ppm | 1s/20 ppm | 3 s | 423 K | electrical | [129] |