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. 2019 Nov 6;9:16141. doi: 10.1038/s41598-019-52522-w

Figure 3.

Figure 3

Resistive switching of TiO2 based RRAM devices with different concentrations of BSA. These graphs differentiate real signal change to noise range for I-V detection of the BSA with different concentrations. Inset of each graph shows that there is no significant change in switching voltage of the devices with number of cycles.