Skip to main content
. 2019 Nov 8;5(11):eaav3097. doi: 10.1126/sciadv.aav3097

Fig. 3. Characterizations of stretchable active-matrix transistor sensor array.

Fig. 3

(A) In situ measurement of resistance of Au/SEBS stretchable interconnect during 10 stretching cycles at different strains (50, 70, and 100%). Inset: Photographs of Au/SEBS interconnect at 0% (left) and 100% (right) strain. (B) Resistance change of Au/SEBS stretchable interconnect as a function of stretching cycle at 0 and 50% strain. (C) OM images of pristine (0% strain, upper left), stretched (100% strain, upper right), released (0% strain, lower right), and stretched (100% strain; 100 cycles, lower left) Au/SEBS stretchable interconnect. (D) Architecture and (E) photograph of a fully stretchable 5 × 5 active-matrix transistor strain sensor array fabricated via our developed strain-sensitive, stretchable, and self-healable semiconducting film. Scale bar, 5 mm. (F) Mapping and (G) statistical distribution of the field-effect mobility in our stretchable active-matrix transistor array. (H) Transfer curves and (I) normalized on-current of fully stretchable transistor in active-matrix array as a function of strain. Photo credits: Jin Young Oh, Department of Chemical Engineering, Kyung Hee University and Donghee Son, Biomedical Research Institute, Korea Institute of Science and Technology. SQRT, square root.