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. 2019 Nov 8;9:16335. doi: 10.1038/s41598-019-52654-z

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© The Author(s) 2019

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

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Variation of the Seebeck coefficient and figure of merit upon electrical resistivity for a bulk Si at T = 300 K. Theoretical estimates are made using the works of Yi and Yu⁴⁷ and Morelli et al.⁵⁹. Relaxation time τ_p is obtained by taking into account phonon-phonon and Umklapp scattering, phonon-alloy and boundary scattering. τ_e takes into account electron scattering by impurities and phonons.