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. 2019 Nov 5;13:77. doi: 10.3389/fncom.2019.00077

Table 5.

GPe model synaptic current equations.

Current	Equation	Location	Parameters
I_{STN−GPE, AMPA}	${\bar{g}}_{s y n} s (v - E_{A M P A})$	distal: x ≥ 100μm	τ_rise = 1	τ_rec = 200
			τ_decay = 4	τ_facil = 800
			t_d = 2	U₁ = 0.1
			${\bar{g}}_{s y n} = 3.75 e - 4$
I_{GPE−GPE, GABA_A}	${\bar{g}}_{s y n} s (v - E_{G A B A_{A}})$	proximal: x < 200μm	τ_rise = 2	τ_rec = 400
			τ_decay = 5	τ_facil = 1
			t_d = 0.5	U₁ = 0.2
			${\bar{g}}_{s y n} = 2 e - 4$
I_{GPE−GPE, GABA_B}	${\bar{g}}_{s y n} \frac{G^{n}}{G^{n} + K_{d}^{n}} (v - E_{G A B A_{B}})$	proximal: x < 200μm	τ_rise = 5	K₃ = 0.098
			τ_decay = 25	K₄ = 6.25e−3
			t_d = 0.5	K_d = 1.4
			${\bar{g}}_{s y n} = 0.4 e - 4$	n = 4
I_{iMSN−GPE, GABA_A}	${\bar{g}}_{s y n} s (v - E_{G A B A_{A}})$	proximal: x < 200μm	τ_rise = 2	τ_rec = 1
			τ_decay = 5	τ_facil = 200
			t_d = 5	U₁ = 0.3
			${\bar{g}}_{s y n} = 3 e - 4$