Figure 5.
Specific contact resistance ρc of Ti/Al/Ni Ohmic contacts as a function of the acceptor concentration NA in p-type-implanted 4H-SiC. The continuous line is the fit of the experimental data obtained using the TFE model with a barrier height of 0.63 eV. Inset: simulated curves for values of ΦB = 0.60 eV, ΦB = 0.63 eV, and ΦB = 0.65 eV.
