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. 2019 Nov 15;7:708. doi: 10.3389/fchem.2019.00708

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Copyright © 2019 Lee, Suh and Jang.

This is an open-access article distributed under the terms of the Creative Commons Attribution License (CC BY). The use, distribution or reproduction in other forums is permitted, provided the original author(s) and the copyright owner(s) are credited and that the original publication in this journal is cited, in accordance with accepted academic practice. No use, distribution or reproduction is permitted which does not comply with these terms.

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Graphene-based FET metal ion sensors. (A) Fabrication process of RGO thin films on 3-aminopropyltriethoxysilane (APTES)-modified quartz. (B) I_DS-V_g curve at 0.1 M phosphate buffer solution of RGO FET. Inset: Schematic diagram of overall RGO FET. (C) Real-time sensing curves with various concentrations of Ca²⁺ ions. (D) Real-time sensing curves with various concentrations of Hg²⁺ ions. Figures (A–D) were reproduced from Sudibya et al. (2011) with permission from the American Chemical Society.