Fig. 2. Different crystallization orientation induced by process parameters.

(A) The out-of-plane GIXRD θ − 2θ diffraction patterns of as-deposited PEDOT films grown on silicon substrates at the different deposition temperature of 110° and 140°C with varying VOCl₃ saturation ratio. a.u., arbitrary units. Schematic illustration of crystallization orientation and the distance between planes in (B) face-on orientation and (C) edge-on orientation. (D) Summary of the percentage of preferential crystallization orientation in the bar chart for all 16 PEDOT films grown at different deposition temperature and VOCl₃ saturation ratio. The percentage of preferential orientation was calculated on the basis of the normalized integrated peak intensities after applying the Lorentz polarization (LP) factor. The lengths of the red-colored and blue-colored bars display the percentage of the face-on and edge-on orientation, respectively. (E) The percentage of preferential crystallization orientation in PEDOT films grown at the deposition temperature of 150°C and using FeCl₃ as an oxidant as a comparison with the volatile liquid oxidant (VOCl₃) that is used in this study.