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. Author manuscript; available in PMC: 2019 Nov 25.
Published in final edited form as: J Neural Eng. 2019 Oct 9;16(6):066003. doi: 10.1088/1741-2552/ab2610

Table 2. Key properties of the Chebyshev notch AFE.

Property Value Units/comments
Supply voltage ±5, ±2.5 Volts
Gain 60, 80 dB (programmable)
Integrated noise 26 nV rms (0.5–40 Hz)
33 nV rms (0.5–100 Hz)
96 nV rms (0.5–500 Hz)
CMRR 130 dB (DC to 60 Hz)
Maximum tolerable differential DC offset ±32/85a mV
Dynamic range ±2.3 mV (peak), gain = 1000
±230 μV (peak), gain = 10000
SNR 30 dB (minimum)
Nonlinearity <0.2% THD
High-pass corner 0.5 Hz
Low-pass corner 500 Hz
Total current consumption 32 mA
Hours of continuous operation 28 h (900 mAh battery)
a

Measured differential DC offset rejection of 85 mV is achieved when a 1st order analog 0.5 Hz high-pass filter is cascaded after the front-end INA (stage 1 of the current AFE).