Skip to main content
. 2019 Nov 26;10:5374. doi: 10.1038/s41467-019-13436-3

Fig. 2.

Fig. 2

Zn plating/stripping behaviors in ZES. a Voltage profiles of galvanostatic Zn plating/stripping with the maximum oxidation potential of 0.5 V (vs. Zn/Zn2+) in ZES at a rate of 0.5 mA cm−2 (1.0 mAh cm−2). The working and counter electrodes are Ti and Zn, respectively. b Cyclic voltammetry (CV) curves of Zn plating/stripping in ZES at a scan rate of 1 mV s−1 with a potential range of −0.5–1.2 V and an average deposition capacity of ~0.61 mAh cm−2. The working and counter electrodes are Ti and Zn, respectively. c Chronocoulometry curves of Zn plating/stripping in ZES based on CV. Voltage responses of Zn/Zn symmetric cells d in ZES and 1 M Zn(TFSI)2 electrolytes at 0.1 mA cm−2 (0.05 mAh cm−2 for each half cycle) for 1000 cycles (insets: the optical images of the cycled Zn after 180 cycles in 1 M Zn(TFSI)2 (left) and 2000 cycles in ZES (right)), and e in ZES electrolyte (inset: in 1 M Zn(TFSI)2 electrolyte) at 1 mA cm−2 (0.5 mAh cm−2 for each half cycle).