Table 1.

MBE growth parameters of 2D layered GaSe materials on GaAs (001) substrates.

Sample ID	A	B	C	B-Se	C-Se
Se-pretreatment	—	—	—	15 min. at 600 °C	15 min. at 600 °C
Growth time	30 min.	60 min.	120 min.	60 min.	120 min.
Growth temperature	425 °C
Ga partial pressure	1.39 × 10−7 torr
Se partial pressure	7.76 × 10−7 torr
VI/III ratio	5.6