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. 2019 Nov 29;9:17943. doi: 10.1038/s41598-019-53651-y

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© The Author(s) 2019

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

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Scheme 1 — Schematics of growth apparatus and the proposed growth mechanism. (a) The enhanced CVD furnace for the growth of S-doped TiO₂ nanostructures (dashed box depicts the cool and vent mechanism appended to this system for rapid sample pull-out). (b) The sequential growth process flow; surface roughening using HF solution, followed by annealing at 650 °C and sulfur exposure at the same temperature. The initial layer would be TiS₂ whereas the top layer would turn into an oxidized layer during the oxidation step, forming heterostructures. S-doped TiO₂ nanosheets are synthesized through the oxidation and subsequent cooling step.