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. 2019 Nov 29;9:17998. doi: 10.1038/s41598-019-54424-3

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© The Author(s) 2019

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

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(a) Sheet resistance of SLG/AgNWs composite films with different concentrations of AgNWs. The schematic illustrates the possibilities of the AgNWs to reduce the resistance of graphene. (b) Carrier mobility and carrier concentration of SLG/AgNWs composite films for different concentrations of AgNWs. (c) AgNWs provide a more accessible path for electrons to move than hoping between graphene layers within the overlapping sections. The insert shows a front view of electron transport within an overlapping section. (d) AgNWs provide new conductive “bridges” between the grain boundaries of graphene.