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. 2019 Dec 2;10:5488. doi: 10.1038/s41467-019-13325-9

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© The Author(s) 2019

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

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Fig. 1 — Pump-probe spectroscopy of carrier multiplication (CM). a The CM process (left), and two different Auger processes identified in vdW materials. b Schematic of the differential transmittance experiment. c Steady-state absorption spectrum of the investigated 2H-MoTe₂ thin film, featuring multiple peaks, including the primary A and B excitons. An indirect bandgap (E_g) is also marked. In the inset, the smooth background absorption has been subtracted, to better reveal the peaks at excitonic transitions. d Band structure and density of states for 2H-MoTe₂ thin-film.