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. 2019 Dec 9;9:18574. doi: 10.1038/s41598-019-54130-0

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© The Author(s) 2019

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THz response of the highly doped-Si QD with the antenna at six frequencies. (a) Dark current I₀ (the dark curve) and THz photocurrent I_THz(f) (the other colored curves) at source–drain voltage of 5 mV. THz photocurrent depicted in left figure are offset by multiples of 2 nA. The right figure is smaller V_G range. (b) Schematic view of the THz responses in the Coulomb blockade region; (I) detrapping process of the localized electron in donor levels; (II) THz-assisted tunneling process between the donor levels. These processes provide the modification of polarization field as shown in the bottom plains. (c) Frequency dependence of the maximum and V_G-fixed sensitivity.