Table 1. Summary of 3°γ (HBN) Effect in VSr, HHr, Psr, and 8-17dza.
productive
hydrogen bonding (%) |
|||
---|---|---|---|
system | M2+ | no M2+ | 3°γ (HBN) |
VSr | 86 | 14 | 6.1 |
HHr | 95 | 45 | 2.1 |
Psr | 49 | 40 | 1.2 |
Psr* | 78 | 40 | 2.0 |
8-17dz | 86 | 8 | 10.8 |
productive
hydrogen bonding (%) |
|||
---|---|---|---|
oxo | RP thio | inv. thio | |
VSr DM | 23 | 88 | 3.8 |
expt | 6 |
Percentages of productive hydrogen bonding and corresponding 3°γ (HBN) factors for VSr, HHr, Psr, and 8-17dz (Figure 4). For Psr, the divalent metal ion is outer-sphere bound to the NPO as suggested by experiment20 and theory;9 however, for discussion we also consider an inner-sphere binding mode indicated as “Psr*” (Figure S3). Also shown are results in Figure 3 for the inverse thio effect for oxo and RP thio substrates interpreted as the 3°γ (HBN) for the VSr G638I/A756(3cP) double mutant (“VSr DM”, Figure S2) and compared with experiment (expt).