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. 2019 Oct 27;9(12):10612–10617. doi: 10.1021/acscatal.9b02035

Table 1. Summary of 3°γ (HBN) Effect in VSr, HHr, Psr, and 8-17dza.

  productive hydrogen bonding (%)
 
system M2+ no M2+ 3°γ (HBN)
VSr 86 14 6.1
HHr 95 45 2.1
Psr 49 40 1.2
Psr* 78 40 2.0
8-17dz 86 8 10.8
  productive hydrogen bonding (%)
 
  oxo RP thio inv. thio
VSr DM 23 88 3.8
expt     6
a

Percentages of productive hydrogen bonding and corresponding 3°γ (HBN) factors for VSr, HHr, Psr, and 8-17dz (Figure 4). For Psr, the divalent metal ion is outer-sphere bound to the NPO as suggested by experiment20 and theory;9 however, for discussion we also consider an inner-sphere binding mode indicated as “Psr*” (Figure S3). Also shown are results in Figure 3 for the inverse thio effect for oxo and RP thio substrates interpreted as the 3°γ (HBN) for the VSr G638I/A756(3cP) double mutant (“VSr DM”, Figure S2) and compared with experiment (expt).