. Author manuscript; available in PMC: 2020 Sep 24.

Published in final edited form as: ACS Nano. 2019 Sep 3;13(9):10545–10554. doi: 10.1021/acsnano.9b04626

Table 1.

Summary and comparison of the recent high-bandwidth DNA translocation recordings at 1 MHz and higher bandwidth.

Year/Reference	2012 Rosenstein. et al.⁶	2015 Balan et al.²¹	2016 Shekar et al.⁸	2019 This work
Pore material	SiN_x	SiN_x	a-Si/SiO_x	a-Si/SiO_x
Substrate material	Silicon	Fused-silica	Silicon	Fused-silica
Pore thickness	10 nm	100 nm	~ 3 nm	~ 3 nm
Pore diameter	4 nm	4 nm	< 2 nm	< 2 nm
v_n	$5.3 nV / \sqrt{Hz}$	$1 nV / \sqrt{Hz}$	$3.15 nV / \sqrt{Hz}$	$3.15 nV / \sqrt{Hz}$
C_amp	2.15 pF	20 pF	4 pF	~3.25 pF
C_pore	6 pF	1 pF	~10 pF	1–2 pF
ΣC	8.15 pF	21 pF	14 pF	4–5 pF
Highest bandwidth of translocations reported	1 MHz (dsDNA)	1 MHz (dsDNA)	5 MHz (ssDNA)	10 MHz (ssDNA)
Input-referred noise at 1 MHz bandwidth	155 pA rms	110 pA rms	128 nA rms	65 nA rms